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1

Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells

Golam Rabbani, M., Verma, Amit, Adachi, Michael M., Sundararajan, Jency P., Khader, Mahmoud M., Nekovei, Reza, Anantram, M.P.

Journal:

Solar Energy Materials and Solar Cells

Année:

2014

Langue:

english

Fichier:

PDF, 3.17 MB

english, 2014

2

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Comparison of non-equilibrium Green's function and quantum-corrected Monte Carlo approaches in nano MOS simulation

Tsuchiya,, Ogawa,, Miyoshi,, Svizhenko,, Anantram,

Année:

2004

Langue:

english

Fichier:

PDF, 123 KB

english, 2004

3

Ballistic Quantum Simulators for Studying Variability in Nanotransistors

Martinez, A., Barker, J. R., Svizhenko, A., Anantram, M. P., Bescond, M., Asenov, A.

Journal:

Journal of Computational and Theoretical Nanoscience

Année:

2008

Langue:

english

Fichier:

PDF, 22.47 MB

english, 2008

4

Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation

Hideaki Tsuchiya, Alexei Svizhenko, M. P. Anantram, Matsuto Ogawa, Tanroku Miyoshi

Journal:

Journal of Computational Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 791 KB

english, 2005

5

Rate equations for the phonon peak in resonant-tunneling structures

Lake, Roger, Klimeck, Gerhard, Anantram, M., Datta, Supriyo

Journal:

Physical Review B

Année:

1993

Langue:

english

Fichier:

PDF, 225 KB

english, 1993

6

Physics of carbon nanotube electronic devices

Anantram, M P, Léonard, F

Journal:

Reports on Progress in Physics

Année:

2006

Langue:

english

Fichier:

PDF, 5.38 MB

english, 2006

7

[IEEE 2013 IEEE International Symposium on Circuits and Systems (ISCAS) - Beijing (2013.5.19-2013.5.23)] 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013) - Low-energy and low-latency error-correction for phase change memory

Xinmiao Zhang,, Fang Cai,, Anantram, M. P.

Année:

2013

Langue:

english

Fichier:

PDF, 300 KB

english, 2013

8

[IEEE Comput. Soc IEEE International Conference on Application-Specific Systems, Architectures and Processors - Zurich, Switzerland (14-16 July 1997)] Proceedings IEEE International Conference on Application-Specific Systems, Architectures and Processors - On computing with locally-interconnected architectures in atomic/nanoelectronic systems

Roychowdhury, V.P., Anantram, M.P.

Année:

1997

Langue:

english

Fichier:

PDF, 588 KB

english, 1997

9

Effect of phase breaking on the ac response of mesoscopic systems

Anantram, M. P., Datta, S.

Journal:

Physical Review B

Année:

1995

Langue:

english

Fichier:

PDF, 331 KB

english, 1995

10

Ballistic Transport and Electrostatics in Metallic Carbon Nanotubes

Svizhenko, A., Anantram, M.P., Govindan, T.R.

Journal:

IEEE Transactions on Nanotechnology

Année:

2005

Langue:

english

Fichier:

PDF, 377 KB

english, 2005

11

Steady-state transport in mesoscopic systems illuminated by alternating fields

Datta, Supriyo, Anantram, M. P.

Journal:

Physical Review B

Année:

1992

Langue:

english

Fichier:

PDF, 211 KB

english, 1992

12

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - Atomistic simulation of carbon nanotube field-effect transistors using non-equilibrium Green's function formalism

Jing Guo,, Datta,, Anantram,, Lundstrom,

Année:

2004

Langue:

english

Fichier:

PDF, 147 KB

english, 2004

13

Interbase electronic coupling for transport through DNA

Mehrez, H., Anantram, M. P.

Journal:

Physical Review B

Année:

2005

Langue:

english

Fichier:

PDF, 175 KB

english, 2005

14

Observation and modeling of single-wall carbon nanotube bend junctions

Han, Jie, Anantram, M. P., Jaffe, R. L., Kong, J., Dai, H.

Journal:

Physical Review B

Année:

1998

Langue:

english

Fichier:

PDF, 861 KB

english, 1998

15

Nested dissection solver for transport in 3D nano-electronic devices

Zhao, Y., Hetmaniuk, U., Patil, S. R., Qi, J., Anantram, M. P.

Journal:

Journal of Computational Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 2.12 MB

english, 2016

16

A forming-free bipolar resistive switching behavior based on ITO/V 2 O 5 /ITO structure

Wan, Zhenni, Darling, Robert B., Majumdar, Arka, Anantram, M. P.

Journal:

Applied Physics Letters

Année:

2017

Langue:

english

Fichier:

PDF, 951 KB

english, 2017

17

Detection and identification of genetic material via single-molecule conductance

Li, Yuanhui, Artés, Juan M., Demir, Busra, Gokce, Sumeyye, Mohammad, Hashem M., Alangari, Mashari, Anantram, M. P., Oren, Ersin Emre, Hihath, Joshua

Journal:

Nature Nanotechnology

Année:

2018

Langue:

english

Fichier:

PDF, 3.82 MB

english, 2018

18

Targeting cancer's Achilles’ heel: role of BCL-2 inhibitors in cellular senescence and apoptosis

Anantram, Aarti, Degani, Mariam

Journal:

Future Medicinal Chemistry

Année:

2019

Langue:

english

Fichier:

PDF, 4.60 MB

english, 2019

19

Resonant versus Anti-Resonant Tunneling at Carbon Nanotube A–B–A Heterostructures

N. Mingo, Liu Yang, Jie Han, M.P. Anantram

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 130 KB

english, 2001

20

Atomistic Simulations with Carbon Nanotubes – Classical, Quantum, and Transport Modeling

A. Maiti, J. Andzelm, A. Svizhenko, M.P. Anantram, M. in het Panhuis

Journal:

physica status solidi (b)

Année:

2002

Langue:

english

Fichier:

PDF, 177 KB

english, 2002

21

Nanotubes in nanoelectronics: transport, growth and modeling

M. Anantram, Lance Delzeit, Alan Cassell, Jie Han, M. Meyyappan

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2001

Langue:

english

Fichier:

PDF, 220 KB

english, 2001

22

Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach

A. Martinez, K. Kalna, A. Svizhenko, M. P. Anantram, J. R. Barker, A. Asenov

Journal:

physica status solidi (c)

Année:

2008

Langue:

english

Fichier:

PDF, 358 KB

english, 2008

23

Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green’s Function Formalism

Jing Guo, Supriyo Datta, M. P. Anantram, Mark Lundstrom

Journal:

Journal of Computational Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 161 KB

english, 2004

24

Developing a full 3D NEGF simulator with random dopant and interface roughness

A. Martinez, J. R. Barker, A. Asenov, A. Svizhenko, M. P. Anantram

Journal:

Journal of Computational Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 361 KB

english, 2007

25

NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs

Karol Kalna, Antonio Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker, A. Asenov

Journal:

Journal of Computational Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 492 KB

english, 2008

26

Transport in (10,10) Carbon Nanotubes with Defects

M. P. ANANTRAM, JIE HAN, T. R. GOVINDAN

Journal:

Annals of the New York Academy of Sciences

Année:

1998

Langue:

english

Fichier:

PDF, 5.18 MB

english, 1998

27

Scaling Analysis of Nanowire Phase-Change Memory

Jie Liu, Bin Yu, Anantram, M.P.

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 438 KB

english, 2011

28

Spatially correlated qubit errors and burst-correcting quantum codes

Vatan, F., Roychowdhury, V.P., Anantram, M.P.

Journal:

IEEE Transactions on Information Theory

Année:

1999

Langue:

english

Fichier:

PDF, 225 KB

english, 1999

29

Modeling of Nanoscale Devices

Anantram, M.P., Lundstrom, M.S., Nikonov, D.E.

Journal:

Proceedings of the IEEE

Année:

2008

Langue:

english

Fichier:

PDF, 2.96 MB

english, 2008

30

Role of scattering in nanotransistors

Svizhenko, A., Anantram, M.P.

Journal:

IEEE Transactions on Electron Devices

Année:

2003

Langue:

english

Fichier:

PDF, 554 KB

english, 2003

31

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

Martinez, A., Bescond, M., Barker, J.R., Svizhenko, A., Anantram, M.P., Millar, C., Asenov, A.

Journal:

IEEE Transactions on Electron Devices

Année:

2007

Langue:

english

Fichier:

PDF, 691 KB

english, 2007

32

Multidimensional Modeling of Nanotransistors

Anantram, M.P., Svizhenko, A.

Journal:

IEEE Transactions on Electron Devices

Année:

2007

Langue:

english

Fichier:

PDF, 750 KB

english, 2007

33

Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

Koswatta, S.O., Hasan, S., Lundstrom, M.S., Anantram, M.P., Nikonov, D.E.

Journal:

IEEE Transactions on Electron Devices

Année:

2007

Langue:

english

Fichier:

PDF, 819 KB

english, 2007

34

Optical bio-chemical sensors on SNOW ring resonators

Khorasaninejad, Mohammadreza, Clarke, Nigel, Anantram, M. P., Saini, Simarjeet Singh

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 1.95 MB

english, 2011

35

Potential drop along carbon nanotube devices with current flow

N. Mingo, J. Han, M.P. Anantram, L. Yang

Journal:

Surface Science

Année:

2001

Langue:

english

Fichier:

PDF, 88 KB

english, 2001

36

[IEEE Device Research Conference. Conference Digest - Notre Dame, IN, USA (25-27 June 2001)] Device Research Conference. Conference Digest (Cat. No.01TH8561) - Nano-transistor modeling: two dimensional Green's function method

Svizhenko, A., Anantram, M.P., Govindan, T.R., Biegel, B.

Année:

2001

Langue:

english

Fichier:

PDF, 158 KB

english, 2001

37

A polysaccharide bioprotonic field-effect transistor

Zhong, Chao, Deng, Yingxin, Roudsari, Anita Fadavi, Kapetanovic, Adnan, Anantram, M.P., Rolandi, Marco

Journal:

Nature Communications

Année:

2011

Langue:

english

Fichier:

PDF, 554 KB

english, 2011

38

Strain induced change of bandgap and effective mass in silicon nanowires

Shiri, Daryoush, Kong, Yifan, Buin, Andrei, Anantram, M. P.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 818 KB

english, 2008

39

Two-dimensional quantum mechanical modeling of nanotransistors

Svizhenko, A., Anantram, M. P., Govindan, T. R., Biegel, B., Venugopal, R.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 450 KB

english, 2002

40

Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires

Shiri, Daryoush, Verma, Amit, Selvakumar, C. R., Anantram, M. P.

Journal:

Scientific Reports

Année:

2012

Langue:

english

Fichier:

PDF, 4.16 MB

english, 2012

41

Bunching characteristics of silicon nanowire arrays

Khorasaninejad, Mohammadreza, Abedzadeh, Navid, Singh Jawanda, Ajayinder, O, Nixon, Anantram, M. P., Singh Saini, Simarjeet

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 2.13 MB

english, 2012

42

Band-gap change of carbon nanotubes: Effect of small uniaxial and torsional strain

Yang, Liu, Anantram, M. P., Han, Jie, Lu, J. P.

Journal:

Physical Review B

Année:

1999

Langue:

english

Fichier:

PDF, 117 KB

english, 1999

43

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - A fast semi-numerical technique for the solution of the poisson-boltzmann equation in a cylindrical nanowire

Ramu, Ashok T., Anantram, Manjeri P., Banerjee, Kaustav

Année:

2007

Langue:

english

Fichier:

PDF, 288 KB

english, 2007

44

Erratum: âTwo-dimensional quantum mechanical modeling of nanotransistorsâ [J. Appl. Phys. 91, 2343 (2002)]

Anantram, M. P., Svizhenko, A., Martinez, A.

Journal:

Journal of Applied Physics

Année:

2006

Langue:

english

Fichier:

PDF, 280 KB

english, 2006

45

Core-shell silicon nanowire solar cells

Adachi, M. M., Anantram, M. P., Karim, K. S.

Journal:

Scientific Reports

Année:

2013

Langue:

english

Fichier:

PDF, 868 KB

english, 2013

46

Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias

Koswatta, Siyuranga O., Hasan, Sayed, Lundstrom, Mark S., Anantram, M. P., Nikonov, Dmitri E.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 492 KB

english, 2006

47

Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon

Buin, A. K., Verma, A., Svizhenko, A., Anantram, M. P.

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 152 KB

english, 2008

48

Current fluctuations in mesoscopic systems with Andreev scattering

Anantram, M. P., Datta, S.

Journal:

Physical Review B

Année:

1996

Langue:

english

Fichier:

PDF, 345 KB

english, 1996

49

Role of inelastic electron–phonon scattering in electron transport through ultra-scaled amorphous phase change material nanostructures

Liu, Jie, Xu, Xu, Anantram, M. P.

Journal:

Journal of Computational Electronics

Année:

2014

Langue:

english

Fichier:

PDF, 492 KB

english, 2014

50

Electronic Transport through Carbon Nanotubes: Effects of Structural Deformation and Tube Chirality

Maiti, Amitesh, Svizhenko, Alexei, Anantram, M. P.

Journal:

Physical Review Letters

Année:

2002

Langue:

english

Fichier:

PDF, 175 KB

english, 2002